INSIGHT

Integration of III-V Nanowire Semiconductors for next
Generation High Performance CMOS SOC TECHNOLOGIES

Partners

       LU

 

Department of Electrical and Information Technology

LUND UNIVERSITY
Sweden

About the Nanoelectronics Group
The Nanoelectronics  group focus  on science and technology for nanoelectronics with a particular emphasis on applications in Information and Communication Technology (ICT). III-V MOSFETs in various geometries  are studied targeting optimized device layouts to be used in future applications in radio communication, radar, and imaging. The work combines basic materials studies with device technology development performed in cross-disciplinary collaborations. Nanotechnology is used for integration of III-V materials on Si substrates, and the physics of tunneling is employed to implement novel device functionality. Key applications include transceiver technologies aiming at high bit-rates and low-power operation in the millimetre-wave  frequency range.

 

 UoG  

School of Engineering

UNIVERSITY OF GLASGOW
United Kingdom

The Energy Efficient Electronics team is part of the research division of electronics and nanoscale engineering at the University of Glasgow.  The 10 strong group has expertise in compound semiconductor transistor realisation for low power
(<0.5V) logic; mm-wave (> 100 GHz); and high power switching (> 600V) applications using nitride, arsenide, phosphide and antimonide based materials.  The team
is active in molecular beam epitaxy growth; electron beam lithography with 10 nm critical dimensions; and low damage plasma etching and materials deposition with atomic layer precision.  The team makes extensive use of the James Watt Nanofabrication Centre in Glasgow www.jwnc.gla.ac.uk

 

 Tyndall  

Tyndall National Institute

UNIVERSITY COLLEGE CORK, NATIONAL UNIVERSITY OF IRELAND
Ireland

About NMD
The Nanoelectronic Materials and Devices group (NMD) is part of the Micro & Nanoelectronics centre of the Tyndall National Institute. The group focuses on the investigation of new materials and novel device architectures for future Information and Communication Technologies, and is comprised of ten PhD students, post-doctoral researchers, visiting students and Tyndall Research staff. The current research of the group is focussed on the formation, characterisation and understanding of gate stacks and contacts to III-V, Ge and 2D semiconductor materials intended for use in future energy efficient logic devices. The group are also exploring the use of MOS systems in energy applications. In project INSIGHT, the NMD group will mainly focus on the gate stack development on III-V channel materials.

 

 IAF  

FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS

FRAUNHOFER IAF
Germany

Fraunhofer IAF is one of the leading research facilities worldwide in the field of III-V semiconductors. The Fraunhofer IAF develops electronic and optoelectronic devices based on modern micro- and nanostructures. The business unit High Frequency Electronics focuses on high performance transistors and monolithic integrated circuit design for applications at millimeter-wave and THz frequencies.

 

 CEA  

CEA-DRT/LETI/DCOS,  Silicon Components Division

COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
France

About Leti (France)
As one of three advanced-research institutes within the CEA Technological Research Division, CEA Tech-Leti serves as a bridge between basic research and production of micro and nanotechnologies that improve the lives of people around the world. It is committed to creating innovation and transferring it to industry. Backed by its portfolio of 2,800 patents, Leti partners with large industrials, SMEs and startups to tailor advanced solutions that strengthen their competitive positions. It has launched 54 startups. Its 8,500m² of new generation cleanroom space feature 200mm and 300mm wafer processing of micro and nano solutions for applications ranging from space to smart devices. With a staff of more than 1,800, Leti is based in Grenoble, France, and has offices in Silicon Valley, Calif., and Tokyo. Follow us at www.leti.fr and @CEA_Leti.

 

 IBM Logo  

IBM RESEARCH GMBH

Switzerland

About IBM Research
Now in its 71st year, IBM Research continues to define the future of information technology with more than 3,000 researchers in 12 labs located across six continents. Scientists from IBM Research have produced six Nobel Laureates, 10 U.S. National Medals of Technology, five U.S. National Medals of Science, six Turing Awards, 19 inductees in the National Academy of Sciences and 20 inductees into the National Inventors Hall of Fame. For more information, please visit www.research.ibm.com.


IBM Research - Zurich
IBM has maintained a research laboratory in Switzerland since 1956, located on its own campus in Rüschlikon near Zurich since 1962. As the European branch of IBM Research, the mission of the IBM Research – Zurich Lab — in addition to pursuing cutting-edge research for tomorrow’s information technology — is to cultivate close relationships with academic and industrial partners, be one of the premier places to work for world-class researchers, to promote women in IT and science, and to help drive Europe’s innovation agenda.

 

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