INSIGHT

Integration of III-V Nanowire Semiconductors for next
Generation High Performance CMOS SOC TECHNOLOGIES

Publications

 

  1. V. Deshpande, V. Djara, E. O'Connor, P. Hashemi, T. Morf, K. Balakrishnan, D. Caimi, M. Sousa, J. Fompeyrine, L. Czornomaz, "Three-dimensional monolithic integration of III-V and Si(Ge) FETs for hybrid CMOS and beyond", Jap. J. Appl. Phys. vol 56, 04CA05 (2017); doi: 10.7567/JJAP.56.04CA05

    (Partners involved: IBM) Open access

  2. Babadi, A. S.; Svensson, J.; Lind, E.; Wernersson, L.-E. "Impact of Doping and Diameter on the Electrical properties of GaSb Nanowires", Appl. Phys. Lett. vol 110 (5) 053502 (2017); http://dx.doi.org/10.1063/1.4975374

    (Partners involved: Lund University) Open access

  3. Cutaia, D.; Moselund, K.; Schmid, H.; Borg, M.; Riel, H. "Uniting III-V Tunnel FETs with Silicon", Compound Semiconductor, vol 23 (1), 38-42 (2017); 

    (Partners involved: IBM) Open access

  4. Borg, M.; Schmid, H.; Gooth, J.; Rossell, M.D.; Cutaia, D.; Knoedler, M.; Bologna, N.; Moselund, K.E.; Riel, H. "High-Mobility in GaSb Nanostructures Cointegrated with InAs on Si", ACS Nano vol 11 (3) 2553-2560 (2017); doi: 10.1021/acsnano.6b04541

    (Partners involved: IBM) Open access after Feb 22nd 2018

  5. O'Connor, E.; Cherkaoui, K.; Monaghan, S.; Sheehan, B.; Povey, I.M.; Hurley, P.K.; "Inversion in the In0.53Ga0.47As Metal-Oxide-Semiconductor system: impact of the In0.53Ga0.47As doping concentration", Appl. Phys. Lett. vol 110, 032902 (2017); doi: 10.1063/1.4973971

    (Partners involved: Tyndall) Open access

  6. Zota C.; Wernersson, L.-E.; Lind, E.; "High-Performance Lateral Nanowire InGaAs MOSFET s with Improved On-Current", IEEE Electron Dev. Lett. vol 37, p1264 (2016); doi: 10.1109/LED.2016.2602841

    (Partners involved: Lund University) Open access

  7. Zota, C.; Lindelöw, F.; Wernersson, L.-E.; Lind, E.; "High-frequency InGaAs Tri-gate MOSFETs with fmax of 400 GHz"; Electronics Letters, vol 52, p1869 (2016); doi: 10.1049/el.2016.3108

    (Partners involved: Lund University) Open access

  8. Zota, C.; Lindelöw, F.; Wernersson, L.-E.; Lind, E.; "InGaAs Tri-gate MOSFETs with record on current", IEEE Internat. Dev. Meeting 2016; doi: 10.1109/IEDM.2016.7838336

    (Partners involved: Lund University) Open access

  9. Schmid, H.; Cutaia, D.; Gooth, J.; Wirths, S.; Bologna, N.; Moselund, K.E.; Riel, H.; (2016) "Monolithic integration of multiple III-V semiconductors on Si for MOSFETs and TFETs", IEEE Internat. Dev. Meeting 2016; p. 3.6.1-3.6.4 doi: 10.1109/IEDM.2016.7838340

    (Partners involved: IBM) Open access pending

  10. Deshpande, V.; Djara, V.; Morf, T.; Hashemi, P.; O'Connor, E.; Balakrishnan, K.; Caimi, D.; Sousa, M.; Czornomaz, L.; Fompeyrine, J.; "InGaAs-on-Si (Ge) 3D Monolithic Technology for CMOS and More-than-Moore", 2016 Int. Conf. Solid State Dev. Mater., Ibaraki, Japan, Sep 26-29 (2016).

    (Partners involved: IBM) Open access pending

  11. Millar, D.; Peralagu, U.; Fu, Y.C.; Li, X.; Steer, M.; Thayne, I. (2016); "Initial investigation on the impact of in situ hydrogen plasma exposure to the interface between molecular beam epitaxially grown p-Ga0.7In0.3Sb (100) and thermal atomic layer deposited (ALD) Al2O3", WoDIM 2016, Catanya Italy

    (Partners involved: Glasgow University) Open access

  12. Zota, C.; Lindelöw, F.; Wernersson, L.-E.; Lind, E. (2016), "InGaAs Nanowire MOSFETs with ION = 555 μA/μm at IOFF = 100 nA/μm and VDD = 0.5 V", 2016 IEEE Symp. VLSI Techn. doi: 10.1109/VLSIT.2016.7573418

    (Partners involved: Lund University) Open access

  13. Berg, M., Kilpi, O.-P., Persson, K.-M., Svensson, J., Hellenbrand, M., Lind, E. and Wernersson, L.-E. (2016) ‘Electrical characterization and modeling of gate-last vertical InAs Nanowire MOSFETs on Si’, IEEE Electron Device Letters, , pp. 1–1. doi: 10.1109/led.2016.2581918.

    (Partners involved: Lund University) Open access

  14. Deshpande, V., Djara, V., O’Connor, E., Caimi, D., Sousa, M., Czornomaz, L., Fompeyrine, J., Hashemi, P. and Balakrishnan, K. (2016) ‘First RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration’, 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), . doi: 10.1109/ulis.2016.7440069.

    (Partners involved:IBM) Open access pending

  15. M. Berg, K. M. Persson, O. P. Kilpi, J. Svensson, E. Lind and L. E. Wernersson, "Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si," 2015 IEEE International Electron Devices Meeting (IEDM), Washington, DC, 2015, pp. 31.2.1-31.2.4. doi: 10.1109/IEDM.2015.7409806

    (Partners involved: Lund University) Open access

  16. C. B. Zota, L. E. Wernersson and E. Lind, "Single suspended InGaAs nanowire MOSFETs," 2015 IEEE International Electron Devices Meeting (IEDM), Washington, DC, 2015, pp. 31.4.1-31.4.4. doi: 10.1109/IEDM.2015.7409808

    (Partners involved: Lund University) Open access
Page Manager: |