Publication archive, 2016
Single suspended InGaAs nanowire MOSFETs
C. B. Zota, L. E. Wernersson and E. Lind, "Single suspended InGaAs nanowire MOSFETs," 2015 IEEE International Electron Devices Meeting (IEDM), Washington, DC, 2015, pp. 31.4.1-31.4.4. doi: 10.1109/IEDM.2015.7409808. (Partners involved: Lund University)
Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si
M. Berg, K. M. Persson, O. P. Kilpi, J. Svensson, E. Lind and L. E. Wernersson, "Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si," 2015 IEEE International Electron Devices Meeting (IEDM), Washington, DC, 2015, pp. 31.2.1-31.2.4. doi: 10.1109/IEDM.2015.7409806. (Partners involved: Lund University)
First RF Characterization of InGaAs Replacement Metal Gate (RMG) nFETs on SiGe-OI FinFETs Fabricated by 3D Monolithic Integratio
Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
Berg, M., Kilpi, O.-P., Persson, K.-M., Svensson, J., Hellenbrand, M., Lind, E. and Wernersson, L.-E. (2016) ‘Electrical characterization and modeling of gate-last vertical InAs Nanowire MOSFETs on Si’, IEEE Electron Device Letters, , pp. 1–1. doi: 10.1109/led.2016.2581918. (Partners involved: Lund University)