Publication archive, 2017
Impact of Doping and Diameter on the Electrical properties of GaSb Nanowires
Babadi, A. S.; Svensson, J.; Lind, E.; Wernersson, L.-E. "Impact of Doping and Diameter on the Electrical properties of GaSb Nanowires", Appl. Phys. Lett. vol 110 (5) 053502 (2017); http://dx.doi.org/10.1063/1.4975374
(Partners involved: Lund University
High-Mobility in GaSb Nanostructures Cointegrated with InAs on Si
Uniting III-V Tunnel FETs with Si
Cutaia, D.; Moselund, K.; Schmid, H.; Borg, M.; Riel, H. "Uniting III-V Tunnel FETs with Silicon", Compound Semiconductor, vol 23 (1), 38-42 (2017);
(Partners involved: IBM)
Inversion in the In0.53Ga0.47As Metal-Oxide-Semiconductor system: impact of the In0.53Ga0.47As doping concentration
O'Connor, E.; Cherkaoui, K.; Monaghan, S.; Sheehan, B.; Povey, I.M.; Hurley, P.K.; "Inversion in the In0.53Ga0.47As Metal-Oxide-Semiconductor system: impact of the In0.53Ga0.47As doping concentration", Appl. Phys. Lett. vol 110, 032902 (2017); doi: 10.1063/1.4973971
(Partners involved: Tyndall)
High-Performance Lateral Nanowire InGaAs MOSFET s with Improved On-Current
Zota C.; Wernersson, L.-E.; Lind, E.; "High-Performance Lateral Nanowire InGaAs MOSFET s with Improved On-Current", IEEE Electron Dev. Lett. vol 37, p1264 (2016); doi: 10.1109/LED.2016.2602841
(Partners involved: Lund University)
High-Frequency InGaAs Tri-gate MOSFETs with fmax of 400 GHz
Zota, C.; Lindelöw, F.; Wernersson, L.-E.; Lind, E.; "InGaAs Tri-gate MOSFETs with fmax of 400 GHz"; Electronics Letters, vol 52, p1869 (2016); doi: 10.1049/el.2016.3108
(Partners involved: Lund University)
InGaAs Tri-gate MOSFETs with Record On-Current
Zota, C.; Lindelöw, F.; Wernersson, L.-E.; Lind, E.; "InGaAs Tri-gate MOSFETs with record on current", IEEE Internat. Dev. Meeting 2016; doi: 10.1109/IEDM.2016.7838336
(Partners involved: Lund University)
Monolithic integration of multiple III-V semiconductors on Si for MOSFETs and TFETs
Initial investigation on the impact of in situ hydrogen plasma exposure to the interface between molecular beam epitaxially grow
Millar, D.; Peralagu, U.; Fu, Y.C.; Li, X.; Steer, M.; Thayne, I. (2016); "Initial investigation on the impact of in situ hydrogen plasma exposure to the interface between molecular beam epitaxially grown p-Ga0.7In0.3Sb (100) and thermal atomic layer deposited (ALD) Al2O3", WoDIM 2016, Catanya Italy
(Partners involved: Glasgow University)
InGaAs Nanowire MOSFETs with ION = 555 μA/μm at IOFF = 100 nA/μm and VDD = 0.5 V
Zota, C.; Lindelöw, F.; Wernersson, L.-E.; Lind, E. (2016), "InGaAs Nanowire MOSFETs with ION = 555 μA/μm at IOFF = 100 nA/μm and VDD = 0.5 V", 2016 IEEE Symp. VLSI Techn. doi: 10.1109/VLSIT.2016.7573418
(Partners involved: Lund University)
Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
Berg, M., Kilpi, O.-P., Persson, K.-M., Svensson, J., Hellenbrand, M., Lind, E. and Wernersson, L.-E. (2016) ‘Electrical characterization and modeling of gate-last vertical InAs Nanowire MOSFETs on Si’, IEEE Electron Device Letters, , pp. 1–1. doi: 10.1109/led.2016.2581918.
(Partners involved: Lund University)