Publication archive, 2018
Facet-selective group-III incorporation in InGaAs Template Assisted Selective Epitaxy
M. Borg, L. Gignac, J. Bruley, A. Malmgren, S. Sant, C. Convertino, M.D. Rossell, M. Sousa, C. Breslin, H. Riel, K.E. Moselund, H. Schmid, Nanotechnology 30, 8, 084004 (2019)
High Performance Quantum Well InGaAs-On-Si MOSFETs With sub-20 nm Gate Length For RF Applications
C.B. Zota, C. Convertino, Y. Baumgartner, M. Sousa, D. Caimi, L. Czornomaz, IEEE Internat. Electron Dev Meeting 2018, 39.4 (2018)
Balanced Drive Currents in 10-20 nm Diameter Nanowire All-III-V CMOS on Si
A. Jönsson, J. Svensson, L-E Wernersson, IEEE Internat. Electron Dev Meeting 2018, 39.3 (2018)
InGaAs-on-Insulator FinFETs with Reduced Off-Current and Record Performance
C. Convertino, C. Zota, S. Sant, F. Eltes, M. Sousa, D. Caimi, A. Schenk, L. Czornomaz, IEEE Internat. Electron Dev Meeting 2018, 39.2 (2018)
Electrical properties of Vertical InAs/InGaAs Heterostructure MOSFETs
O-P Kilpi, J. Svensson, E Lind, L-E Wernersson, J. Electron Dev. Soc. In press 2018
Sub-100-nm Gate-Length Scaling of Vertical InAs/InGaAs Nanowire MOSFETs on Si
O.-P. Kilpi, J. Svensson, L.-E. Wernersson, "Sub-100-nm Gate-Length Scaling of Vertical InAs/InGaAs Nanowire MOSFETs on Si", IEEE Internat. Electron Dev. Meeting 2017, 17.3.1
Low-frequency noise in III-V Nanowire TFETs and MOSFETs
M. Hellenbrand, E. Memicevic, M. Berg, O-P Kilpi, J. Svensson, L.-E. Wernersson, "Low-frequency noise in III-V Nanowire TFETs and MOSFETs", IEEE Electron Dev. Lett. vol 38, p. 1520 (2017)
Monolithic integration of multiple III-V semiconductors on Si
H. Schmid, B. Mayer, J. Gooth, S. Wirths, L. Czornomaz, H. Riel, S. Mauthe, C. Convertino, K.E. Moselund, "Monolithic integration of multiple III-V semiconductors on Si", IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conf. (S3S), 2017
A Scaled Replacement Metal Gate InGaAs-on-Insulator n-FinFET on Si with Record Performance
H. Hahn, V. Deshpande, E. Caruso, S. Sant, E.O'Connor, Y. Baumgartner, M. Sousa, D. Caimi, A. Olziersky, P. Palestri, L. Selmi, A. Schenk, L. Czornomaz, "A Scaled Replacement Metal Gate InGaAs-on-Insulator n-FinFET on Si with Record Performance", IEEE. Internat. Electron Dev. Meeting 2017, 17.5.1